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Capsule Version Avalanche Diode Zk200-1000A

Name: Capsule Version Avalanche Diode Zk200-1000A
Brand: all-electronics-online.com
SKU: 835855455
Availability: InStock
Rating: 4.3 (120 reviews)

Price:	US $ 1/Piece
Min Order:	1/Piece
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Prod Model:	ZK200-1000A
Current:	200A-1000A
Voltage:	100-5000
Manufacturing Technology:	Discrete Device
Material:	Element Semiconductor
Type:	Intrinsic Semiconductor
Package:	SMD
Brand:	Deson

Product Description

Rectifier diode is a kind of device changing AC to DC and has anode and cathode two sides, widely applicable in fields of high power drive, high power rectifiers, non-conotrollable and half-controllable rectifiers. The disc type rectifier diode is characterized by high mean current, low forward voltage drop and double-side cooling, matching with various air-cooling or water-cooling radiators. At present, the high power diode is up to 10000A and voltage can reach 8500V. The stud type, is a kind of device changing AC to DC and has anode and cathode two sides, widely applicable in fields of battery chargers, converters, power supplies, welding machines & motor controls etc. The stud type rectifier diodes are mainly improved from I.R & Semikron and apart from them, the Russian-style diodes, avalanche diodes are developed successfully,too. The metal stud structure and ceramic-metal stud structure both are available and characterized by high surge current capability. Its current is up to 500A.

Type	VRRM	IF(AV) THS 55ºC	IRRM	VFM/IFM 25ºC	RTH(j-hs)	Tjm	M²	Outline
	V	A	mA	V/A	ºC/W	ºC	KN
ZB200A	100-5000	200	16	1.8/600	0.090	150	3.3-5.5	A-2,8,12,15
ZB300A	100-5000	300	30	1.8/900	0.065	150	5.3-10	A-3,9,16
ZB400A	100-5000	400	40	1.8/1200	0.040	150	10-20	A-4,10,13,17,18
ZB500A	100-5000	500	40	1.8/1500	0.040	150	10-20	A-4,10,13,17,18

Type	VRRM	IF(AV) THS 55ºC	trr 100ºC	Qrr	IFSM 10ms	IRRM	VFM/IFM 25ºC	RTH(j-hs)	Tjm	M²	Outline
	V	A	μS	μC	KA	mA	V/A	ºC/W	ºC	KN
ZK200A	100-5000	200	2	70	2.7	16	2.2/600	0.090	150	3.3-5.5	A-2,8,12,15
ZK300A	100-5000	300	3	100	4.1	30	2.4/900	0.065	150	5.3-10	A-3,9,16
ZK400A	100-5000	400	3	100	5.4	40	2.4/1200	0.040	150	10-20	A-4,10,13,17,18
ZK500A	100-5000	500	3	120	8	40	2.4/1800	0.033	150	10-20	A-4,10,13,17,18
ZK800A	100-5000	800	3	130	10	40	2.6/2400	0.033	150	10-20	A-5,19
ZK1000A	100-5000	1000	4	150	13	50	2.6/3000	0.030	150	15-20	A-6,11,14,20

Note:
IGT,VGT,IH are test values under 25ºC . Unless otherwise specified,other parameters in the parameter table are test values under Tjm.
I²t=I²TSM×tw/2:tw=bottom width of half-sinusoid current. Under 50Hz,I²t=0.00512TSM(A²S)
When working under the current of 60 Hz:ITSM(8.3ms)=ITSM(10M=ms)×1.066,Tj=Tjm I²t(8.3ms)=I²t(10ms)×0.943,Tj=Tjm
Gate lead: white or colorless,cathode lead (if necessary): red

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