Electronic Component Specially Engineered PNP Transistor for PCB Assembly

Product Description

MANUFACTURER

NXP Semiconductors

PRODUCT CATEGORY

GP BJT

DESCRIPTION

Trans GP BJT PNP 40V 0.6A Automotive 3-Pin TO-236AB T/R

This specially engineered PNP PMBT2907 from NXP Semiconductors comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 250 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

Specifications

EU RoHS Compliant

Type PNP

Configuration Single

Number of Elements per Chip 1

Maximum Collector Base Voltage (V) 60

Maximum Emitter Base Voltage (V) 5

Maximum Collector Emitter Voltage (V) 40

Maximum DC Collector Current (A) 0.6

Maximum Power Dissipation (mW) 250

Minimum DC Current Gain [email protected]@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|30@500mA@10V

Maximum Transition Frequency (MHz) 200(Min)

Product Category Bipolar Small Signal

Minimum Operating Temperature (°C) -65

Maximum Operating Temperature (°C) 150

Packaging Tape and Reel

Maximum Collector Emitter Saturation Voltage (V) 0.4@15mA@150mA|1.6@50mA@500mA

Maximum Base Emitter Saturation Voltage (V) 1.3@15mA@150mA|2.6@50mA@500mA

Mounting Surface Mount

Package Height (mm) 1(Max)

Package Length (mm) 3(Max)

Package Width (mm) 1.4(Max)

PCB changed 3

Standard Package Name SOT-23

Supplier Package TO-236AB

Pin Count 3

Lead Shape Gull-wing