Electronic Component Transistor Mosfet N-Channel for PCB Assembly

Prod Model:	PMV45EN2
Channel Type:	N
Number Of Elements Per Chip:	1
Maximum Drain Source Voltage (V):	30
Maximum Gate Source Voltage (V):	20
Maximum Continuous Drain Current (a):	5.1
Maximum Gate Threshold Voltage (V):	2
Maximum Drain Source Resistance (Mohm):	42@10V

Product Description

MANUFACTURER
NXP Semiconductors
 
PRODUCT CATEGORY
MOSFETs
 
DESCRIPTION
Trans MOSFET N-CH 30V 5.1A 3-Pin TO-236AB T/R
 
Specifications
EU RoHS Compliant
Product Category Small Signal
Configuration Single
Technology TMOS
Channel Mode Enhancement
Channel Type N
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 30
Maximum Gate Source Voltage (V) 20
Maximum Continuous Drain Current (A) 5.1
Maximum Gate Threshold Voltage (V) 2
Maximum Drain Source Resistance (mOhm) 42@10V
Typical Gate Charge @ Vgs (nC) 3.6@10V
Typical Gate Charge @ 10V (nC) 3.6
Typical Input Capacitance @ Vds (pF) 209@15V
Maximum Power Dissipation (mW) 1115
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Packaging Tape and Reel
Typical Turn-On Delay Time (ns) 3
Typical Turn-Off Delay Time (ns) 11
Typical Fall Time (ns) 2
Typical Rise Time (ns) 12
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 1
Mounting Surface Mount
Package Height (mm) 1(Max)
Package Length (mm) 3(Max)
Package Width (mm) 1.4(Max)
PCB changed 3
Standard Package Name SOT-23
Supplier Package TO-236AB
Pin Count 3
Lead Shape Gull-wing