Electronic Component Transistor of Power Mosfet

Prod Model:	BSS123
Product Category:	Power Mosfet
Technology:	Dmos
Channel Type:	N
Number Of Elements Per Chip:	1
Maximum Drain Source Voltage (V):	100
Maximum Gate Source Voltage (V):	+/-20
Maximum Continuous Drain Current (a):	0.17
Maximum Drain Source Resistance (Mohm):	6000@10V

Product Description

PRODUCT CATEGORY
MOSFETs
 
DESCRIPTION
Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R
 
In addition to amplifying electronic signals, you'll be able to switch between various lines with the BSS123 power MOSFET, developed by Fairchild Semiconductor. Its maximum power dissipation is 360 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device is made with dmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
 
Specifications
EU RoHS Compliant
Product Category Power MOSFET
Technology DMOS
Channel Mode Enhancement
Channel Type N
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 100
Maximum Gate Source Voltage (V) ±20
Maximum Continuous Drain Current (A) 0.17
Maximum Gate Threshold Voltage (V) 2
Maximum Drain Source Resistance (mOhm) 6000@10V
Typical Gate Charge @ Vgs (nC) 1.8@10V
Typical Gate Charge @ 10V (nC) 1.8
Typical Input Capacitance @ Vds (pF) 73@25V
Maximum Power Dissipation (mW) 360
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Packaging Tape and Reel
Mounting Surface Mount
Package Height (mm) 0.93
Package Length (mm) 2.92
Package Width (mm) 1.3
PCB changed 3
Standard Package Name SOT-23
Supplier Package SOT-23
Pin Count 3
Lead Shape Gull-wing