IC Integrated Circuit of Ra Low Power CMOS Static RAM Is62wv51216bll-55tli

Product Description

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
 
FEATURES
• High-speed access time: 45ns, 55ns
• CMOS low power operation
- 36 mW (typical) operating
- 12 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
- 1.65V--2.2V VDD (62WV51216ALL)
- 2.5V--3.6V VDD (62WV51216BLL)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available
 
Description
The ISSI IS62WV51216ALL/ IS62WV51216BLL are highspeed,
8M bit static RAMs organized as 512K words by 16
bits. It is fabricated using ISSI's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields highperformance
and low power consumption devices.
 
When CS1 is HIGH (deselected) or when CS2 is LOW
(deselected) or when CS1 is LOW, CS2 is HIGH and both
LB and UB are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
 
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory. A
data byte allows Upper Byte (UB) and Lower Byte (LB)
Access.
 
The IS62WV51216ALL and IS62WV51216BLL are packaged
in the JEDEC standard 48-pin mini BGA (7.2mm x 8.7mm)
and 44-Pin TSOP (TYPE II).