| Prod Model: |
H57V2562GTR-75C |
| Power Supply Voltage: |
Vdd = 3.3V, Vddq = 3.3V |
| Programmable CAS Latency Of: |
2 or 3 |
| Commercial Temp: |
0oc ~ 70oc Operation |
| Package Type: |
54_Pin Tsopii |
Product Description
Hello, Thank you for your visiting!
We, Zhuhai Yukming Technology Co., Ltd. are a one-stop cupply chain for integrated circuit (IC), capacitor, resistor, diode, LED, relay and connector etc for PCB assembly. We have our own reliable sources after setting up the head office in Shenzhen and developing the branch in Zhuhai, and we can completely guarantee the products of original.Come to us, and we will try the best to support you by controlling our cost as possible as we can achieve WIN-WIN cooperation. | Lead time | Stock in Hong Kong, Shenzhen and Zhuhai, timely delivery. |
| Guarantee | 100% original assembled new ; 30 days warranty |
| Payment | Hang Seng Bank (Hong Kong), Paypal, |
| Shipment | DHL ,TNT ,FEDEX, UPS or any other express as you require |
DESCRIPTIONThe Hynix H57V2562GTR Synchronous DRAM is 268,435,456bit CMOS Synchronous DRAM, ideally suited for the consumermemory applications which requires large memory density and high bandwidth. It is organized as 4banks of4,194,304 x 16 I/O.Synchronous DRAM is a type of DRAM which operates in synchronization with input clock. The Hynix SynchronousDRAM latch each control signal at the rising edge of a basic input clock (CLK) and input/output data in synchronizationwith the input clock (CLK). The address lines are multiplexed with the Data Input/ Output signals on a multiplexed x16Input/ Output bus. All the commands are latched in synchronization with the rising edge of CLK.The Synchronous DRAM provides for programmable read or write Burst length of Programmable burst lengths: 1, 2, 4,8 locations or full page. An AUTO PRECHARGE function may be enabled to provide a self-timed row precharge that isinitiated at the end of the burst access. The Synchronous DRAM uses an internal pipelined architecture to achievehigh-speed operation. This architecture is compartible with the 2n rule of prefetch architectures, but it also allows thecolumn address to be changed on every clock cycle to achieve a high-speed, fully random access. Precharging onebank while accessing one of the other three banks will hide the precharge cycles and provide seamless, high-speed,randon-access operation.Read and write accesses to the Hynix Synchronous DRAM are burst oriented;accesses start at a selected location and continue for a programmed number of locations in a programmed sequence.Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command.The address bits registered coincident with the ACTIVE command are used to select the bank and the row to beaccessed. The address bits registered coincident with the READ or WRITE command are used to select the bank andthe starting column location for the burst access.All inputs are LVTTL compatible. Devices will have a VDD and VDDQ supply of 3.3V (nominal). 256Mb Synchronous DRAM(16M x 16) FEATURESStandard SDRAM ProtocolInternal 4bank operationPower Supply Voltage : VDD = 3.3V, VDDQ = 3.3VAll device pins are compatible with LVTTL interfaceLow Voltage interface to reduce I/O power8,192 Refresh cycles / 64msProgrammable CAS latency of 2 or 3Programmable Burst Length and Burst Type- 1, 2, 4, 8 or full page for Sequential Burst- 1, 2, 4 or 8 for Interleave BurstCommercial Temp : 0oC ~ 70oC OperationPackage Type : 54_Pin TSOPIIThis product is in compliance with the directive pertaining of RoHS.Any items you need, please send the BOM List to us, we will for sure to supply you not only with new and original products but also the best service by our professional team who are with us since our head office in Shenzhen was set up in 2009!
Zhuhai Yukming Technology Co., Ltd. is mainly engaged in R&D and marketing of car radar and camera system for blind spot, with a team made up of professional vehicle electronics experts and excellent management talents we have established good market network and service system now.
In the meantime, we can supply with original ICs and other electronic components including diodes, LEDs, capacitor, especially electrolytic capacitors, connectors, inductors, relays etc.
We take scientific and technological innovation as the forerunner, integrity management and long-term cooperation as development criterion, build credibility with quality to serve the global CM, OEM, ODM and EMS, this is our consistent pursuit.
All of you are welcomed to visit us and give instructions, so that we can develop and make the progress hand in hand.
Following "Quality First, Service Oriented", Yukming is here for you!
