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Electronic Component Transistor of Power Mosfet for Switching

PRODUCT CATEGORYMOSFETsDESCRIPTIONTrans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/RThis BSS84 power MOSFET from Fairchild Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 360 mW. This product will be s

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Electronic Component Transistor of PNP Transistor

FEATURES• Low current (max. 100 mA)• Low voltage (max. 65 V).APPLICATIONS• General purpose switching and amplification.DESCRIPTIONPNP transistor in a SOT23 plastic package.NPN complements: BC846 and BC8471. Highlights of our product:1-1.Stock in Hong Kong, Shenzhen and Zhuhai, time

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Electronic Component Transistor for Switching and Af Amplifier Applications

FeaturesIdeally Suited for Automatic InsertionComplementary PNP Types Available(BC856-BC858)For Switching and AF Amplifier ApplicationsMechanical DataCase: SOT-23, Molded PlasticCase material - UL Flammability RatingClassification 94V-0Moisture sensitivity: Level 1 per J-STD-020ATerminals: Solderabl

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Electronic Component Transistor of Power Mosfet

PRODUCT CATEGORYMOSFETsDESCRIPTIONTrans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/RIn addition to amplifying electronic signals, you'll be able to switch between various lines with the BSS123 power MOSFET, developed by Fairchild Semiconductor. Its maximum power dissipation is 360 mW. In order to guarant

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Electronic Component Transistor of Trans Mosfet N-Channel

MANUFACTURERInfineon Technologies AGPRODUCT CATEGORYMOSFETsDESCRIPTIONTrans MOSFET N-CH 30V 86A 3-Pin(2+Tab) DPAK T/RSpecificationsEU RoHS Compliant Product Category Power MOSFETTechnology HEXFETChannel Mode EnhancementChannel Type NNumber of Elements per Chip 1Maximum Drain Source Voltage (V) 30Max

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Electronic Component Trans Digital Bjt NPN Transistor

MANUFACTURERInfineon Technologies AGPRODUCT CATEGORYDigital BJTDESCRIPTIONTrans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-23 T/RThe NPN BCR108E6327HTSA1 digital transistor from Infineon Technologies is your alternative to traditional BJTs in that it can provide digital signal processing power.

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Higt Quality IC Chip 2n3055 New and Original

Higt Quality IC Chip 2n3055 New and Original1 Prouduct Description1.100% of the stock .2.Quality and cheap, fast delivery.3.Engaged in IC industry more than 25 years.4.Gold membership.D/C2014+Qty in stockMore than 10000 pcsLead time3-5 day for own stockRemarkNew and original ;100% good qualityWarran

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Guangzhou Aluminum Heat Sink/Aluminum Radiator for Transistor

Guangzhou Aluminum Heat Sink/Aluminum Radiator for TransistorProduction Description:Material6000 series AluminiumTemperT4, T5, T6Size /ThicknessGeneral profiles thickness from 0.8 to 5.0mm,length from 3m-6m or customized available;Anodize protection film thickness from 8~25 um,powder coating from 40

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NPN General Purpose Transistor of Electronic Component

NPN general purpose transistorFEATURES•High current (max. 500 mA)•Low voltage (max. 45 V).APPLICATIONSGeneral purpose switching and amplification.DESCRIPTIONNPN transistor in a SOT23 plastic package.PNP complement: BC807CategoryDiscrete Semiconductor ProductsFamilyTransistors - Bipolar (

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Trans Darlington PNP Transistor of Electronic Component

MANUFACTURERSTMicroelectronicsPRODUCT CATEGORYDarlington BJTDESCRIPTIONTrans Darlington PNP 100V 5A 3-Pin(3+Tab) TO-220 TubeSpecificationsEU RoHS Compliant Type PNPNumber of Elements per Chip 1Maximum Collector Emitter Voltage (V) 100Maximum Collector Base Voltage (V) 100Maximum Emitter Base Voltage

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Electronic Component PNP General Purpose Transistor

PNP general purpose transistorFEATURES•High current (max. 500 mA)•Low voltage (max. 45 V).APPLICATIONS•General purpose switching and amplification.DESCRIPTIONPNP transistor in a SOT23 plastic package.NPN complements: BC817.PNP general purpose transistorFEATURES•High current (

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N-Channel Enhancement Mode Power Field Effect Transistor Mosfet

Features9A, 900V, RDS(on)= 1.4 @VGS= 10 VLow gate charge ( typical 45 nC)Low Crss ( typical 14pF)Fast switching100% avalanche testedImproved dv/dt capabilityRoHS compliantDescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild's proprietary, planarstrip

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Electronic Component Transistor of ESD Suppressor Tvs 3V 5-Pin

MANUFACTURERSTMicroelectronicsPRODUCT CATEGORYESD SuppressorsDESCRIPTIONESD Suppressor TVS 3V 5-Pin SOT-323 T/RThis tvs ESDA6V1W5 ESD protection device from STMicroelectronics is ideal for protecting your electronic components and circuits from electrostatic discharge. This ESD diode has a maximum E

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Electronic Component Transistor of LED Indication - Discrete

Category OptoelectronicsFamily LED Indication - DiscretePackaging Tape & Reel (TR)Part Status ActiveColor Green, RedLens Color ColorlessLens Transparency ClearMillicandela Rating 350mcd Green, 90mcd RedLens Style/Size Rectangle with Flat Top, 1.60mm x 0.80mmVoltage - Forward (Vf) (Typ) 3.3V Green, 1

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Electronic Component Transistor of P-Channel Mosfet

Ultra Low On-ResistanceUltra Low On-ResistanceP-Channel MOSFETSOT-23 FootprintLow Profile (

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Transistor Dual Enhancement Mode Mosfet

Hello, Thank you for your visiting!We, Zhuhai Yukming Technology Co., Ltd. are aone-stop cupply chain for integrated circuit (IC), capacitor, resistor, diode, LED, relay andconnectoretc for PCB assembly.We have our own reliable sources after setting up the head office in Shenzhen and developing the

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Electronic Component Transistor of 5-Line Transient Voltage Suppressor Array

5-Line Transient Voltage Suppressor ArrayThis 5−line voltage transient suppressor array is designed forapplication requiring transient voltage protection capability. It isintended for use in over−transient voltage and ESD sensitiveequipment such as computers, printers, automotive electro

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NPN Silicon Digital Transistor of Electronic Component for PCB Assembly

NPN Silicon Digital TransistorNPN Silicon Digital Transistor•Switching in circuit, inverter, interface circuit,drive circuit•Built in bias resistor (R1= 10 k,R2= 10 k)•BCR133S: Two internally isolatedtransistors with good matchingin one multichip package•BCR133S: For orientat

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N-Channel Enhancement Mode Field Effect Transistor of Electronic Component

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTORFeaturesLow On-ResistanceLow Gate Threshold VoltageLow Input CapacitanceFast Switching SpeedLow Input/Output LeakageLead Free/RoHS Compliant (Note 3)Qualified to AEC-Q101 Standards for High ReliabilityMechanical DataCase: SOT-23Case Material: Molded

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NPN General Purpose Transistor of Electronic Component for PCB Assembly

NPN General Purpose TransistorFeaturesLow currentLow voltageThree different gain selectionsApplicationsGeneral-purpose switching and amplificationFor AF input stages and driver applicationsHigh current gainLow collector-emitter saturation voltageLow noise between 30 Hz and 15 kHzComplementary

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